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| GS150TA25110 GS150TI25110 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V 250 250 Type GS150 GS150 GS150 Part Number TI25110 TC25110 TA25110 Configuration Triple Independent Triple Common cathode Triple Common anode GS150TC25110 I DC = 10 A V RRM = 250 V CJunction = 18 pF 250 250 250 250 A1 T R IP L E IN D E P E N D E N T (T I) C1 C2 C3 TRIPLE COMMON CATHODE (TC) A1 A2 A3 C1 C2 C3 TRIPLE COMMON ANODE (TA) A1 A2 A3 C1 C2 C3 A = Anode, C = Cathode A2 A3 Symbol I FAV IFAV IFSM TVJ Tstg Ptot Isolation Isolation Conditions TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine Maximum Ratings 10 9 20 -55...+175 -55...+150 A A A C C W V V Features TC = 25C (20W/device) (Substrate to Case) (Diode to Diode) 25 >2500 >600 Low forward voltage Very high switching speed Trr <15ns Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 Applications Symbol IR VF CJ RthJC Weight Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 5 A; IF = 5 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 1.3 1.3 1.3 1.2 18 6 2 1.5 mA mA V V pF K/W g MHz switched mode power supplies (SMPS) High frequency converters Resonant converters VR = 100 V; TVJ = 125C Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data per diode unless otherwise specified IXYSRF reserves the right to change limits, conditions and dimensions (c) 2003 IXYSRF/Directed Energy, Inc. IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 GS150TA25110 GS150TI25110 100.00 1000 GS150TC25110 CAPACITANCE 10.00 Amperes CAPACITANCE IN pF 100 1.00 0.10 0.00 10 0.50 1.00 Volts 1.50 2.00 0.1 1 10 100 1000 REVERSE BIAS VOLTAGE IN VOLTS Fig. 1Typical forward characteristics Fig. 2 Typical junction capacity versus blocking voltage 160 140 120 300 250 REVERSE VOLTAGE 200 150 100 50 0 1.00E-06 TEMPERATURE IN C 100 80 60 40 20 0 1.00E-06 1.00E-05 LEAKAGE CURRENT IN AMPERES 1.00E-04 1.00E-05 1.00E-04 1.00E-03 1.00E-02 LEAKAGE CURRENT IN AMPERES Fig. 3 Typical leakage current vs. voltage at 25C Fig. 4 Typical leakage current vs. temperature at 100V Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide Schottky diodes: Conduction Rectifier Diode By majority + minority carriers GaAs Schottky Diode By majority carriers only VF (IF), see Fig. 1 Reverse current charges junction capacity CJ, see Fig. 2; not temperature dependent No turn on overvoltage peak Doc #9200-0262 Rev 1 (c) 2003 IXYSRF/Directed Energy, Inc. IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 Forward characteristics VF (IF) Turn off characteristics Extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) Delayed saturation leads to VFR Turn on characteristics |
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